PART |
Description |
Maker |
KM23C4100DET KM23C4100DT |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] http://
|
29F400C-55 29F400C-90 29F400C-70 |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
AM29LV400B-100WAC |
EEPROM,FLASH,256KX16/512KX8,CMOS,BGA,48PIN,PLASTIC From old datasheet system
|
AMD Inc
|
AT29LV040ANBSP AT29LV040A-15JC AT29LV040A-15TC |
EEPROM|FLASH|512KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | TSSOP封装| 32脚|塑料 EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | LDCC | 32脚|塑料 4M bit, 3-Volt Read and 3-Volt Write Flash
|
Atmel, Corp. Atmel Corp
|
KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HT27C4096 |
CMOS 256Kx16-Bit OTP EPROM
|
holtek
|
MX29F004TTC-12 MX29F004TTC-12G MX29F004TTC-55 MX29 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC 4 Mbit (512 K x 8-Bit) 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices] AMD Inc
|
MX29F004TPC-90 29F004B-90 29F004T-70 29F004B-70 29 |
4M-BIT [512KX8] CMOS FLASH MEMORY 4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|